Semiconductor bio-sensors and methods of manufacturing the same

ABSTRACT

A method of manufacturing a semiconductor bio-sensor comprises providing a substrate, forming a first dielectric layer on the substrate, forming a patterned first conductive layer on the first dielectric layer, the patterned first conductive layer including a first portion and a pair of second portions, forming a second dielectric layer, a third dielectric layer and a fourth dielectric layer in sequence over the patterned first conductive layer, forming cavities into the fourth dielectric layer, forming vias through the cavities, exposing the second portions of the patterned first conductive layer, forming a patterned second conductive layer on the fourth dielectric layer, forming a passivation layer on the patterned second conductive layer, forming an opening to expose a portion of the third dielectric layer over the first portion of the patterned first conductive layer, and forming a chamber through the opening.

BACKGROUND OF THE INVENTION

The present invention generally relates to a method of manufacturing asemiconductor device and, more particularly, to a method ofmanufacturing a semiconductor bio-sensor.

With the growth of semiconductor industry and the progress insemiconductor process, computing, communication and consumer deviceshave been increasingly designed with a compact size. As well,bio-sensors are manufactured in shrinking scales that may thereforefulfill the requirements of portability and compactness. FIGS. 1A to 1Care schematic cross-sectional views illustrating a method ofmanufacturing a semiconductor bio-sensor in prior art. Referring to FIG.1A, a substrate 10 may be provided. A first dielectric layer 11 whichmay include, for example, silicon dioxide (SiO₂), may then be formed onthe substrate 10. The first dielectric layer 11 may serve as a padlayer.

Referring to FIG. 1B, next, a patterned conductive layer 12 which mayinclude, for example, poly-silicon, may be formed on the firstdielectric layer 11. The patterned conductive layer 12 may serve as asensing resistor for the bio-sensor 1. A portion 12-1 of the patternedconductive layer 12 may be lightly implanted or doped with a first-typeimpurity, for example, an n-type impurity, which may provide therequired resistance for the sensing resistor. Furthermore, secondportions 12-2 of the patterned conductive layer 12 may be heavilyimplanted or doped with the first-type impurity to form electricalcontact regions for the sensing-resistor.

Referring to FIG. 1C, a second dielectric layer 14 which may include,for example, SiO₂, may then be formed on the patterned conductive layer12 and the first dielectric layer 11. The second dielectric layer 14 mayserve as an insulator for the sensing-resistor of the bio-sensor 1.

With an increasing demand of integrating bio-sensors with othersemiconductor devices, it is required to fabricate the bio-sensors andsemiconductor devices in a complementary metal-oxide-semiconductor(CMOS) process. However, unfortunately, the thin insulator layer 14 andconductor layer 12 of the bio-sensor, if not properly protected, may beeasily damaged in the CMOS process. It may therefore be desirable tohave a method that is able to manufacture a semiconductor bio-sensorwith other semiconductor devices in a CMOS process.

BRIEF SUMMARY OF THE INVENTION

The present invention is directed to a method for manufacturing asemiconductor bio-sensor that may be integrated with other CMOS deviceson a single wafer.

Examples of the present invention may provide a method of manufacturinga semiconductor bio-sensor. The method may comprise providing asubstrate, forming a first dielectric layer on the substrate, forming apatterned first conductive layer on the first dielectric layer, thepatterned first conductive layer including a first portion and a pair ofsecond portions to sandwich the first portion, forming a seconddielectric layer on the patterned first conductive layer, the seconddielectric layer having an etch rate greater than that of the patternedfirst conductive layer, forming a third dielectric layer on the seconddielectric layer, forming a fourth dielectric layer on the thirddielectric layer, the fourth dielectric layer having an etch rategreater than that of the thirds dielectric layer, forming cavities intothe fourth dielectric layer by an isotropic etch, forming vias throughthe cavities by an anisotropic etch, exposing the second portions of thepatterned first conductive layer, forming a patterned second conductivelayer on the fourth dielectric layer, which fills the cavities andresults in pads over the second portions of the patterned firstconductive layer, forming a passivation layer on the patterned secondconductive layer, forming an opening by an anisotropic etch, the openingexposing a portion of the third dielectric layer over the first portionof the patterned first conductive layer, and forming a chamber betweenthe pads by an isotropic etch through the opening.

Some examples of the present invention may also provide a method ofmanufacturing a semiconductor bio-sensor. The method may compriseproviding a substrate, forming a first dielectric layer on thesubstrate, forming a patterned first conductive layer on the firstdielectric layer, the patterned first conductive layer including a firstportion and a pair of second portions, forming a second dielectriclayer, a third dielectric layer and a fourth dielectric layer insequence over the patterned first conductive layer, forming cavitiesinto the fourth dielectric layer, forming vias through the cavities,exposing the second portions of the patterned first conductive layer,forming a patterned second conductive layer on the fourth dielectriclayer, forming a passivation layer on the patterned second conductivelayer, forming an opening to expose a portion of the third dielectriclayer over the first portion of the patterned first conductive layer,and forming a chamber through the opening.

Examples of the present invention may further provide a semiconductorbio-sensor. The semiconductor bio-sensor may comprise a substrate, afirst dielectric layer on the substrate, a patterned first conductivelayer on the first dielectric layer, the patterned first conductivelayer including a first portion and a pair of second portions tosandwich the first portion, a second dielectric layer on the patternedfirst conductive layer, the second dielectric layer having an etch rategreater than that of the patterned first conductive layer, a thirddielectric layer on the second dielectric layer, a fourth dielectriclayer on the third dielectric layer, the fourth dielectric layer havingan etch rate greater than that of the third dielectric layer, a pair ofpads over the second portions in electrical connection with the secondportions, a patterned second conductive layer on the pads, and a channelregion between the pads to expose the third dielectric layer.

Additional features and advantages of the present invention will be setforth in portion in the description which follows, and in portion willbe obvious from the description, or may be learned by practice of theinvention. The features and advantages of the invention will be realizedand attained by means of the elements and combinations particularlypointed out in the appended claims.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory onlyand are not restrictive of the invention as claimed.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The foregoing summary, as well as the following detailed description ofthe invention, will be better understood when read in conjunction withthe appended drawings. For the purpose of illustrating the invention,examples are shown in the drawings. It should be understood, however,that the invention is not limited to the precise arrangements andinstrumentalities shown in the examples.

In the drawings:

FIGS. 1A to 1C are schematic cross-sectional views illustrating a methodof manufacturing a semiconductor bio-sensor in prior art;

FIGS. 2A to 2M are schematic cross-sectional views illustrating a methodof manufacturing a semiconductor bio-sensor in accordance with anexample of the present invention; and

FIG. 3 is a schematic cross-sectional view illustrating an exemplaryoperation of the semiconductor bio-sensor illustrated in FIG. 2M.

DETAILED DESCRIPTION OF THE INVENTION

Reference will now be made in detail to the present examples of theinvention illustrated in the accompanying drawings. Wherever possible,the same reference numbers will be used throughout the drawings to referto the same or like portions. It should be noted that the drawings arein greatly simplified form and are not to precise scale.

FIGS. 2A to 2M are schematic cross-sectional views illustrating a methodof manufacturing a semiconductor bio-sensor in accordance with anexample of the present invention. Referring to FIG. 2A, a substrate 20that has been doped with a first-type impurity, for example, a p-typeimpurity, may be provided. Next, a plurality of complementary metaloxide semiconductor (CMOS) devices 21, i.e., complementary andsymmetrical pairs of first-type and second-type devices such as n-typeand p-type metal oxide semiconductor field effect transistors (MOSFETs),may be formed in the substrate 20. In one example, the CMOS devices 21may comprise a pair of first-type and second-type MOSFETs 21-1 which mayoperate under a relatively high operating voltage, for example, 12 Volts(V), another pair of first-type and second-type MOSFETs 21-2 which mayoperate under a moderate operating voltage, for example, 5V and stillanother pair of first-type and second-type MOSFETs 21-3 which mayoperate under a relatively low operating voltage, for example, 3V. Eachof the MOSFETs 21-1, 21-2 and 21-3 may serve as, for example, a switchdevice.

Moreover, a plurality of peripheral devices 22 may be formed beside theCMOS devices 21 in the substrate 20. In one example, the peripheraldevices 22 may comprise a capacitor 22-1 and a resistor 22-2. Thecapacitor 22-1 may include a first electrode 221, a second electrode 222and a dielectric layer 220 between the first and second electrodes 221and 222. The capacitor 22-1 may sense a pressure applied thereon andtherefore serve as a sound sensor, for example, a microphone. Theresistor 22-2 may have a tunable resistance and may serve as athermopile sensor to detect a change in temperature. The CMOS devices 21and the peripheral devices 22 may be formed at a first region of thesubstrate 20 in a CMOS process.

Referring to FIG. 2B, a first dielectric layer 23 may be formed on theCMOS devices 21, the peripheral devices 22 and the substrate 20 by adeposition process. In one example, the first dielectric layer 23 mayinclude undoped silicon glass silicon dioxide (USGOX) having a thicknessranging from approximately 900 angstroms (Å) to 1100 Å. The firstdielectric layer 23 may serve as a pad layer.

Next, a patterned first conductive layer 24 may be formed beside theperipheral devices 22 at a second region of the substrate 20 by adeposition process followed by a lithography process and an etchingprocess. In one example, the patterned first conductive layer 24 mayinclude poly-silicon having a thickness ranging from approximately 500 Åto 700 Å. In another example, the patterned first conductive layer 24may include poly-silicon germanium (poly-SiGe). In still anotherexample, the patterned first conductive layer 24 may includemonocrystalline silicon or nanocrystal-silicon. The patterned firstconductive layer 24 may serve as a sensing resistor for the bio-sensor.

Referring to FIG. 2C, the patterned first conductive layer 24 may thenbe implanted with one of the first-type or the second-type impurity.Specifically, in one example, a first portion 24-1 of the patternedfirst conductive layer 24 may be lightly implanted with the first-typeimpurity having a concentration ranging from approximately 2.5×10¹⁴ cm⁻²to 5×10¹⁴ cm⁻². The lightly implanted portion 24-1 of the patternedfirst conductive layer 24 may serve as a resistive region that providesrequired resistance for the sensing resistor. Furthermore, a pair ofsecond portions 24-2 of the patterned first conductive layer 24, whichsandwich the first portion 24-1, may be heavily implanted with thefirst-type impurity having a concentration of approximately 3×10¹⁵ cm⁻².The heavily implanted portions 24-2 of the patterned first conductivelayer 24 may serve as electrical contact regions for the sensingresistor.

In another example, the first portion 24-1 of the patterned firstconductive layer 24 may be lightly implanted with the second-typeimpurity, i.e., an n-type impurity, having a concentration ranging fromapproximately 2.5×10¹⁴ cm⁻² to 5×10¹⁴ cm⁻² to form a resistive regionfor the sensing resistor, and the second portions 24-2 of the patternedfirst conductive layer 24 may be heavily implanted with the second-typeimpurity having a concentration of approximately 3×10¹⁵ cm⁻² to formelectrical contact regions for the sensing resistor of the bio-sensor.Although in the present example the first portion 24-1 is implantedbefore the second portions 24-2, however, a person skilled in this artshould understand that the sequence of implantation may beinterchangeable.

Referring to FIG. 2D, a second dielectric layer 26 may then be formed onthe first dielectric layer 23, the patterned first conductive layer 24and the substrate 20 by a deposition process. The second dielectriclayer 26 may exhibit desirable adhesion with the patterned firstconductive layer 24. In one example, the second dielectric layer 26 mayinclude SiO₂ having a relatively thin thickness ranging fromapproximately 40 Å to 50 Å. In another example, the second dielectriclayer 26 may include silicon oxynitride (SiON). The second dielectriclayer 26 may serve as a first insulator that may provide desirableadhesiveness with the sensing resistor.

Furthermore, a third dielectric layer 27 may be formed on the seconddielectric layer 26 by a deposition process. In one example, the thirddielectric layer 27 may include silicon nitride (Si₃N₄) having arelatively thin thickness ranging from approximately 130 Å to 140 Å. Inanother example, the third dielectric layer 27 may include aluminumnitride (AlN). The third dielectric layer 27 may serve as a secondinsulator that may provide electrical insulation between subsequentlayers formed thereon and the sensing resistor. In still anotherexample, a third insulator (not shown) of silicon oxynitride (SiON) mayoptionally be formed between the first and the second insulators, i.e.the second and third dielectric layers 26 and 27.

Next, a fourth dielectric layer 28 may be formed on the third dielectriclayer 27 by a deposition process followed by a planarization processsuch as a chemical mechanical polish (CMP) process. In one example, thefourth dielectric layer 28 may include a first sub-layer (not shown) ofUSGOX having a thickness ranging from approximately 900 Å to 1100 Å anda second sub-layer (not shown) of boron phosphate silicon glass (BPSG)having a thickness of approximately 7000 Å. The fourth dielectric layer28 may serve as an inter-layer dielectric (ILD) layer.

Referring to FIG. 2E, a patterned first mask layer 29 may then be formedon the fourth dielectric layer 28 by a coating process. In one example,the patterned first mask layer 29 may include photo-resist. Using thepatterned first mask 29 layer as a mask, a plurality of first vias 30may be formed through the first to the fourth dielectric layers 23, 26,27 and 28 over the CMOS devices 21 and the peripheral devices 22 by ananisotropic etch such as a dry etching process. Specifically, some firstvias 30-1 may expose the drain 21 d and the source 21 s regions of eachof the MOSFETs 21. Furthermore, other first vias 30-2 may expose theresistor 22-2 and the first and second electrodes 221 and 222 of thecapacitor 22-1.

Referring to FIG. 2F, the patterned first mask layer 29 may then bestripped and a patterned second mask layer 31 may be formed on thefourth dielectric layer 28. Using the patterned second mask layer 31 asa mask, first cavities 32 may be formed into the fourth dielectric layer28 over the electrical contact regions 24-2 of the sensing resistor byan isotropic etch such as a wet etching process.

Referring to FIG. 2G, through the first cavities 32, second vias 33 maybe formed through the second, the third and the fourth dielectric layers26, 27 and 28 by an anisotropic etching process using the patternedsecond mask layer 31 as a mask. In one example, the anisotropic etchingprocess may have a higher etching-selectivity for SiO₂ than forpoly-silicon. For example, the etching rate for SiO₂ may range fromapproximately 50 angstroms per second (Å/s) to 56 Å/s and the etchingrate for poly-silicon may range from approximately 5 Å/s to 8.5 Å/s. Theselectivity ratio of SiO₂ to poly-silicon may therefore range fromapproximately 5.88 to 11. Accordingly, while portions of the seconddielectric layer 26 which may include SiO₂ is completely etched, theelectrical contact regions 24-2 that include poly-silicon may beslightly etched during the anisotropic etching process. The second vias33 may thus expose the electrical contact regions 24-2.

Although in the present example the first vias 30 are formed before thesecond vias 33, however, a person skilled in this art should understandthat the sequence of forming the first vias 30 and the second vias 33may be interchangeable.

Referring to FIG. 2H, the patterned second mask layer 31 may then beremoved and a second conductive layer 37 may be formed on the fourthdielectric layer 28 by, for example, a sputtering process. The secondconductive layer 37 fills the first vias 30 and the second vias 33,resulting in first contacts 34 at the first region and second contacts35 and pads 36 over the contact regions 24-2 at the second region of thesubstrate 20. In one example, the second conductive layer 37 may includean alloy of aluminum and copper (AlCu). Furthermore, the secondconductive layer 37 may have a thickness of approximately 7000 Å.

Referring to FIG. 2I, a patterned third mask layer 38 may be formed onthe second conductive layer 37. Using the patterned third mask layer 38as a mask, the second conductive layer 37 may be etched, resulting in apatterned second conductive layer 37-1. The patterned second conductivelayer 37-1 may serve as an interconnection layer to electrically couplewith the first contacts 34 and the pads 36. Specifically, through theinterconnection layer, i.e. the patterned second conductive layer 37-1,the drain 21 d and source 21 s of each of the MOSFETs 21, the peripheraldevices 22 and the electrical contact regions 24-2 of the sensingresistor may be electrically coupled to an external circuit.

Referring to FIG. 2J, the patterned third mask layer 38 may then beremoved and a fifth dielectric layer 39 may be formed on the fourthdielectric layer 28 and the patterned second conductive layer 37-1 by adeposition process. In one example, the fifth dielectric layer 39 mayinclude SiO₂ having a thickness of approximately 2000 Å.

Furthermore, a sixth dielectric layer 40 may be formed on the fifthdielectric layer 39 by a deposition process. In one example, the sixthdielectric layer 40 may include Si₃N₄ having a thickness ofapproximately 7000 Å. The fifth and the sixth dielectric layers 39 and40 may together serve as a passivation layer to provide electricalisolation for the patterned second conductive layer 37-1. In addition,with the rigidness of Si₃N₄, the sixth dielectric layer 40 may providephysical protection for the patterned second conductive layer 37-1 toavoid damage from subsequent processes.

Next, a patterned fourth mask layer 41 may then be formed on the sixthdielectric layer 40. Using the patterned fourth mask layer 41 as a mask,a first opening 42 may be formed through the fifth and sixth dielectriclayers 39 and 40 into the fourth dielectric layer 28 by an anisotropicetching process. The first opening 42 may therefore expose a portion28-1 of the fourth dielectric layer 28 over the first portion 24-1 ofthe first conductive layer 24. The exposed portion 28-1 may be at adistance ranging from approximately 1000 Å to 1500 Å from the uppersurface 27-1 of the third dielectric layer 27.

Referring to FIG. 2K, a chamber 43 between the pads 36 may be formed byetching the fourth and the fifth dielectric layers 28 and 39 from thefirst opening 42 by an isotropic etching process, using the patternedfourth mask layer 41 as a mask. Specifically, the isotropic etchingprocess may have a higher etching-selectivity for SiO₂ than for Si₃N₄.For example, the etching rate for SiO₂ may range from approximately 11Å/s to 12 Å/s and the etching rate for Si₃N₄ may range fromapproximately 1.05×10⁻¹ Å/s to 1.7×10⁻¹ Å/s. The selectivity ratio ofSiO₂ to Si₃N₄ may therefore range from approximately 64.7 to 114.Accordingly, after the isotropic etching process, the fifth dielectriclayer 39 that may include SiO₂ and the fourth dielectric layer 28 thatmay include USGOX and BPSG between the pads 36 may be largely etchedwhile the sixth dielectric layer 40 that may include Si₃N₄ around thefirst opening 42 and the third dielectric layer 27 that may includeSi₃N₄ under the first opening 42 may be slightly etched. The chamber 43may serve as a channel region for the bio-sensor, which will bediscussed in later paragraphs by reference to FIG. 3. In addition, afterthe above-mentioned isotropic etching process, the portion 28-1 of thefourth dielectric layer 28 may be totally etched while the thirddielectric layer 27 under the first opening 42 may be slightly etched,that may in turn expose a portion 27-2 of the third dielectric layer 27and leave the thin first and second insulators, i.e. the second andthird dielectric layers 26 and 27 over the sensing resistor 25.

Referring to FIG. 2L, the patterned fourth mask layer 41 may then beremoved and a patterned fifth mask layer 44 may be formed on the sixthdielectric layer 40. Using the patterned fifth mask layer 44 as a mask,second openings 45 and third openings 46 may be formed through the sixthdielectric layer 40 into the fifth dielectric layer 39 by a dry etchingprocess. Specifically, the second openings 45 may substantially exposeportions 37-1 a of the patterned second conductive layer 37-1 over thefirst contacts 34 associated with the source and drain regions 21 s and21 d of the MOSFETs 21. The exposed portions 37-1 a may serve as padsfor the MOSFETs devices 21, which may operate at operating voltages of12V, 5V and 3V. Furthermore, the second openings 45 may substantiallyexpose portions 37-1 b of the patterned second conductive layer 37-1over the first contacts 34 associated with the peripheral devices 22.Moreover, the third openings 46 may substantially expose portions 37-1 cof the patterned second conductive layer 37-1 over the second contacts35 associated with the electrical contact regions 24-2 of the sensingresistor. The exposed portions 37-1 c may serve as pads for the sensingresistor of the bio-sensor.

Referring to FIG. 2M, the patterned fifth mask layer 44 may then beremoved and external connecting wires 47 may be coupled to the exposedportions 37-1 a, 37-1 b and 37-1 c of the patterned second conductivelayer 37-1. Through the connecting wires 47, a semiconductor device 200including the CMOS devices 21, the peripheral devices 22 and thebio-sensor 25 may be configured to perform a dedicated or customizedfunction.

FIG. 3 is a schematic cross-sectional view illustrating an exemplaryoperation of the semiconductor device 200 illustrated in FIG. 2M.Referring to FIG. 3, in operation, a voltage Vs may be applied to thesensing resistor 25, inducing a current Is that may flow throughportions 37-1 c of the patterned second conductive layer 37-1, pads 36,second contacts 35 and the sensing resistor 25 of the bio-sensor. Thechamber 43, as the channel region for the bio-sensor, may receiveelectrolyte 48 sampled from a bio-organism under testing (not shown).The sensing resistor 25 may thereafter sense ions 49 in the electrolyte48. Specifically, some of the ions 49 in the electrolyte 48 may contactthe upper surface of the second insulator, i.e. the third dielectriclayer 27. Through the relatively thin first and second insulators, i.e.the second and third dielectric layers 26 and 27, the ions 49 thatcontact the upper surface of the second insulator, i.e. the thirddielectric layer 27 may further introduce ions 50 of an oppositepolarity within the sensing-resistor 25. The introduced ions 50 withinthe sensing-resistor 25 may influence and therefore change theconcentration of the lightly implanted impurity therein, that may inturn change the sheet resistance of the sensing resistor 25.Accordingly, the magnitude of the induced current Is flowing through thesensing resistor 25 may be changed given that the applied voltage Vsremains constant. Such change in the induced current Is may then bemeasured, and the ions 49 in the electrolyte 48 may be therefore sensedby the bio-sensor. Malfunction of the bio-organism under testing maylead to an abnormal concentration of ions 49, which may deviate from astandard value, introduce a deviated amount of ions 50 within thesensing resistor 25 and therefore cause a change in the resistancethereof. Hence, the malfunction of the bio-organism under testing may bedetected by the bio-sensor. Furthermore, in the semiconductor device200, the capacitor 22-1 may serve as a sound sensor, and the resistor22-2 may serve as a thermopile sensor.

1. A semiconductor bio-sensor comprising: a substrate; a firstdielectric layer on the substrate; a patterned first conductive layer onthe first dielectric layer, the patterned first conductive layerincluding a first portion and a pair of second portions to sandwich thefirst portion; a second dielectric layer on the patterned firstconductive layer, the second dielectric layer having an etch rategreater than that of the patterned first conductive layer; a thirddielectric layer on the second dielectric layer; a fourth dielectriclayer on the third dielectric layer, the fourth dielectric layer havingan etch rate greater than that of the third dielectric layer; a pair ofpads over the second portions in electrical connection with the secondportions; a patterned second conductive layer on the pads; and a channelregion between the pads to expose the third dielectric layer.
 2. Thesemiconductor bio-sensor of claim 1, wherein the first portion of thepatterned first conductive layer includes a lightly doped impurity andthe second portions include a heavily doped impurity.
 3. Thesemiconductor bio-sensor of claim 1, wherein the second dielectric layerincludes a material selected from one of silicon dioxide and siliconoxynitride.
 4. The semiconductor bio-sensor of claim 1, wherein thethird dielectric layer includes a material selected from one of siliconnitride and aluminum nitride.
 5. The semiconductor bio-sensor of claim1, wherein the fourth dielectric layer includes a first sub-layer ofundoped silicon glass oxide (USGOX) and a second sub-layer of boronphosphate silicon glass (BPSG).
 6. The semiconductor bio-sensor of claim1 further comprising a passivation layer on the fourth dielectric layerto expose the channel region, wherein the passivation layer includes afifth dielectric layer and a sixth dielectric layer on the fifthdielectric layer.
 7. The semiconductor bio-sensor of claim 6, whereinthe fifth dielectric layer includes silicon oxide and the sixthdielectric layer include silicon nitride.